The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Feb. 22, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kazuya Nishihori, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a method for measuring an impurity concentration profile uses a wafer including a semiconductor layer. The method includes measuring an impurity concentration profile in a depth direction from each surface of a plurality of first portions, each of the first portions being included in any one of a plurality of first regions provided in the semiconductor layer. Each of the first regions has a different size and is surrounded by a second region including a second portion having a different structure from the first portion. The method includes determining a change between the impurity concentration profiles measured in the first regions.