The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2000
Filed:
Nov. 17, 1998
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A manufacturing method of compound semiconductor field effect transistor capable of enhancing a gate/drain withstand voltage includes a step of forming a channel layer by implanting ions into the surface of a semi-insulating compound semiconductor substrate and a step of performing a first thermal treatment for removing crystalline defects on the surface of the channel layer. This method also includes a step of forming a compound semiconductor epitaxial layer by use of an epitaxial method on a region covering the channel layer, a step of forming a gate electrode within a region on the epitaxial layer just above the channel layer and a step of forming a source region and a drain region in the substrate. A concentration of the impurity for forming the channel layer at an interface between the channel layer and the epitaxial layer is 45% or under of the highest concentration when forming the channel layer. A good interface between the channel layer and the epitaxial layer can be thereby obtained, and a transistor having the high-quality epitaxial layer can be also acquired.