The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2000
Filed:
Oct. 03, 1997
Kazuya Nishihori, Tokyo-to, JP;
Yoshiaki Kitaura, Kawasaki, JP;
Mayumi Morizuka, Kawasaki, JP;
Atsushi Kameyama, Tokyo-to, JP;
Masami Nagaoka, Ebina, JP;
Hirotsugu Wakimoto, Kawasaki, JP;
Tadahiro Sasaki, Tokyo-to, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.