The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Dec. 09, 2003
Kazuya Nishihori, Tokyo, JP;
Masanori Ochi, Yokohama, JP;
Takao Noda, Yokohama, JP;
Yoshitomo Sagae, Yokohoma, JP;
Kenji Hommyo, Yamato, JP;
Kazuya Nishihori, Tokyo, JP;
Masanori Ochi, Yokohama, JP;
Takao Noda, Yokohama, JP;
Yoshitomo Sagae, Yokohoma, JP;
Kenji Hommyo, Yamato, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A heterojunction type compound semiconductor field effect transistor includes a channel layer, a first electron supply layer, an electric field strength reducing layer, a first contact layer, a recess stopper layer, and a second contact layer sequentially stacked on a compound semiconductor substrate. This transistor has a double recess structure. The first contact layer is composed of GaAs or InGaAs doped with n type impurities with a high electron mobility. The electric field strength reducing layer is composed of intrinsic InGaP.