The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Sep. 01, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Mitsutoshi Nakamura, Kawasaki Kanagawa, JP;
Masami Nagaoka, Ebina Kanagawa, JP;
Kazuya Nishihori, Shibuya Tokyo, JP;
Keita Masuda, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes an insulating layer, a semiconductor layer on the insulating layer, and a control electrode on the semiconductor layer. The semiconductor layer includes first and second semiconductor parts and a separation trench between the first and second semiconductor parts. The first and second semiconductor parts extending along the insulating film. The first semiconductor part includes first and second regions of a first conductivity type, and a fifth region of a second conductivity type between the first and second regions. The second semiconductor part includes third and fourth regions of the second conductivity type, and a sixth region of the second conductivity type between the third and fourth regions. The control electrode extends over the fifth and sixth regions. The semiconductor layer further including a seventh region of the second conductivity type at a bottom of the separation trench and electrically connecting the fifth and sixth regions.