The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 1997
Filed:
Jan. 25, 1996
Kazuya Nishihori, Tokyo, JP;
Yoshiaki Kitaura, Kawasaki, JP;
Yoshikazu Tanabe, Kawasaki, JP;
Tomonori Aoyama, Kawasaki, JP;
Kyoichi Suguro, Yokohama, JP;
Kumi Okuwada, Kawasaki, JP;
Shuichi Komatsu, Yokohama, JP;
Kazuhide Abe, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaka, JP;
Abstract
A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.