Kumi Okuwada

Title: Kumi Okuwada: Innovator in Semiconductor Technology

Introduction

Kumi Okuwada is a prominent inventor based in Kawasaki, Japan, known for her significant contributions to semiconductor technology. With a total of 12 patents to her name, she has made remarkable advancements in the field, particularly in the production of semiconductor devices.

Latest Patents

One of her latest patents is a method of producing semiconductor devices that allows for the burial of silicon oxide without shape deterioration in device isolation trenches. This innovative method involves several steps, including forming an etching resistive mask over a semiconductor substrate, etching the substrate to create a device isolation trench, and applying a silazane perhydride polymer solution. The process culminates in the densification of silicon oxide left in the trench, enhancing the performance of semiconductor devices. Another notable patent is for a semiconductor integrated circuit featuring a ferroelectric capacitor. This design includes a first insulation film, a buried first electrode, and a second insulation film with a ferroelectric film, showcasing her expertise in integrating advanced materials into semiconductor technology.

Career Highlights

Kumi Okuwada works at Kabushiki Kaisha Toshiba, where she has been instrumental in developing cutting-edge semiconductor technologies. Her work has not only advanced the capabilities of semiconductor devices but has also contributed to the overall progress of the industry.

Collaborations

Throughout her career, Kumi has collaborated with esteemed colleagues such as Hiroshi Mochizuki and Hiroyuki Kanaya. These partnerships have fostered innovation and have been pivotal in her research and development efforts.

Conclusion

Kumi Okuwada's contributions to semiconductor technology exemplify her dedication and expertise in the field. Her innovative patents and collaborative efforts continue to shape the future of semiconductor devices, making her a key figure in the industry.