The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Jun. 27, 2003
Atsuko Kawasaki, Yokohama, JP;
Satoshi Matsuda, Yokohama, JP;
Hisakazu Matsumori, Yokohama, JP;
Hidenori Shibata, Kitakyushu, JP;
Kumi Okuwada, Kawasaki, JP;
Atsuko Kawasaki, Yokohama, JP;
Satoshi Matsuda, Yokohama, JP;
Hisakazu Matsumori, Yokohama, JP;
Hidenori Shibata, Kitakyushu, JP;
Kumi Okuwada, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of: forming an etching resistive mask over a semiconductor substrate; etching the semiconductor substrate through an opening in the etching resistive mask to form a device isolation trench; forming a coat of a silazane perhydride polymer solution over the semiconductor substrate having the device isolation trench formed therein; vaporizing a solvent from the coat and then subjecting the coat to chemical reaction to form a film of silicon oxide; removing said film of the silicon oxide leaving a residue inside said device isolation trench; and heating said silicon oxide left in said device isolation trench for densification.