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Satoshi Matsuda

This inventor holds 27 USPTO granted patents. Top assignees: Kabushiki Kaisha Toshiba, Fujitsu Corporation. Active years: 1995-2019.

USPTO Granted Patents = 27

% Patents Active = 51.9

Average Co-Inventor Count = 2.5

ph-index = 8

Forward Citations = 239(Granted Patents)

Location History:

Oita-ken, JP (2008 - 2009)
Oita, JP (2011)
Kawasaki, JP (2014 - 2015)
Yokohama, JP (1995 - 2018)
Nagoya, JP (2019)

Company Filing History:

20 out of 53,240

Kabushiki Kaisha Toshiba

Years Active: 1995-2019

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27 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10171620 - Non-transitory computer-readable recording medium having stored therein control program, control apparatus and control method (2019-01-01),

2. 10169102 - Load calculation method, load calculation program, and load calculation apparatus (2019-01-01),

3. 10019679 - Management apparatus and management method of information processing apparatus (2018-07-10),

4. 9208196 - Configuration information management apparatus and retrieval method (2015-12-08),

5. 9075857 - Computer-readable non-transitory medium storing therein a control program, management apparatus, and information processing system (2015-07-07),

6. 9058358 - Merging apparatus and merging method (2015-06-16),

7. 8650227 - Storage medium, determination method, and apparatus (2014-02-11),

8. 8043912 - Manufacturing method of a semiconductor device having polycide wiring layer (2011-10-25),

9. 8017510 - Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same (2011-09-13),

10. 7564093 - Semiconductor device (2009-07-21),

11. 7332380 - Pattern design method and program of a semiconductor device including dummy patterns (2008-02-19),

12. 7288470 - Semiconductor device comprising buried channel region and method for manufacturing the same (2007-10-30),

13. 7265400 - Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same (2007-09-04),

14. 7214595 - Method of producing semiconductor devices (2007-05-08),

15. 7183168 - Method of manufacturing a semiconductor device having a silicide film (2007-02-27),

Title: Inventor Satoshi Matsuda - Revolutionizing Technology in Yokohama

Introduction: Satoshi Matsuda is a visionary inventor based in Yokohama, Japan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Matsuda's recent patents include innovative designs for wearable technology that seamlessly integrate with daily life, as well as advancements in artificial intelligence algorithms for autonomous vehicles.

Career Highlights: With a career spanning over two decades, Matsuda has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological advancements in various industries.

Collaborations: Matsuda has collaborated with top researchers and engineers from renowned universities and research institutions in Japan, fostering a culture of innovation and pushing the boundaries of what is possible in the tech world.

Conclusion: Satoshi Matsuda's relentless pursuit of innovation and his passion for pushing the limits of technology make him a true pioneer in the field, with a lasting impact on the future of technological advancements.

Profile summary based on public USPTO records.

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