Kabushiki Kaisha Toshiba

Fujitsu Corporation

Satoshi Matsuda

Kenichi Shimazaki

Yasuhiro Katsumata

Kazunao Muramoto

Hiroki Matsueda

Hiroshi Iwai

Masanobu Saito

Yukihiro Ushiku

Mizuki Ono

Yasushi Akasaka

Hisayo S Momose

Takashi Yoshitomi

Hideaki Nii

Atsushi Azuma

Shinnosuke Nagakura

Kazuya Ohuchi

Kazumi Inoh

Tsutomu Sato

Ichiro Mizushima

Takaaki Nakazawa

Hidemi Ishiuchi

Ichiro Kotani

Saeko Nakamura

Naoki Tateishi

Hui Li

Yuki Torii

Yoko Yonemoto

Claudio Fiegna

Tatsuya Ooguro

Kenichi Mori

Atsuko Kawasaki

Hidenori Shibata

Kumi Okuwada

Kiyoshi Kouge

Hisakazu Matsumori

Chihiro Yoshino

Yasuhide Tobo

Yukihisa Miyagawa

Takeo Iizuka

Yuki Nojiri

Takeshi Kawaguchi

Akira Ogata

Kensuke Tokoda

Akio Oba

Satoshi Ohta

Kazunori Kandani

A load calculation program that causes a computer a process includes acquiring processor usage information including usage of a processor of an managed computer, which is a management object, and usage of the processor for each of a plurality of virtual machines generated by a hypervisor executed on the managed computer; acquiring data transmission information including a data transmission amount for each virtual network interface used by the plurality of virtual machines; detecting a first virtual network interface that performs data transmission without routing through the hypervisor among the plurality of virtual network interfaces, based on the processor usage information and the data transmission information; and calculating load information including processor usage for data transmission of each of the plurality of virtual machines, based on whether or not each of the virtual machines uses the first virtual network interface.

Load calculation method, load calculation program, and load calculation apparatus

Processing request information of a processing request for a first computer by a second computer is acquired, first operation information and second operation information that relate to operations of the first computer and the second computer are acquired, respectively; and a type of the processing request is determined based on processing result information, the processing request information, the first operation information, and the second operation information. The processing result information associates a processing history of the first computer according to the processing request included in the processing request information for the first computer with the second operation information that relates to the processing request by the second computer making the processing request. Accordingly, the type of the processing request can be appropriately determined.

Non-transitory computer-readable recording medium having stored therein control program, control apparatus and control method

A management apparatus includes: a unit to read configuration information of information processing apparatuses, which contains an attribute value of each of information processing apparatuses and a reference relationship between the information processing apparatuses, and log information containing a first type command executed by the information processing apparatuses; a unit to check a parameter value specified by the first type command with the configuration information of information processing apparatuses and to extract path information indicating a relationship between first configuration information of a first information processing apparatus with the first type command being executed and second configuration information of a second information processing apparatus that contains and attribute value coincident with the parameter value; and a unit to generate a second type command with the path information being specified in the first type command in place of the parameter value.

Management apparatus and management method of information processing apparatus

A configuration information management apparatus includes a control unit which, generates a retrieval formula pattern representing a pattern of a first relationship retrieval formula which has been input, executes retrieval processing on the retrieval formula pattern, measures a state required for the retrieval processing which has been executed, determines whether or not the state satisfies a first condition, and when the first condition is satisfied, stores a retrieval condition relating to a retrieval subject configuration item in the retrieval formula pattern satisfying the first condition in a database as a short retrieval key, and retrieves, when a second relationship retrieval formula is input and a retrieval formula pattern of the second relationship retrieval formula satisfies a second condition, the retrieval subject configuration item in the second relationship retrieval formula, on the basis of the short retrieval key.

Configuration information management apparatus and retrieval method

A computer-readable, non-transitory medium storing therein a control program that causes a management apparatus to execute an operation, the operation comprises specifying, from among a plurality of databases, a database with the highest frequency of update of target data to be integrated which is stored in the database, transmitting, in accordance with acquisition of update data from the specified database, to a database other than the specified database among the plurality of databases, a request to transmit information stored in the database other than the specified database to the management apparatus and updating the target data to be integrated on the basis of the information transmitted to the management apparatus by the database other than the specified database in accordance with the request.

Computer-readable non-transitory medium storing therein a control program, management apparatus, and information processing system

A merging apparatus includes a first database in which a plurality of attributes including a key attribute that is set in advance as a key for merging is set and a second database in which one or a plurality of attributes excluding the key attribute is set. Furthermore, the merging apparatus checks an attribute that is set in the first database against an attribute that is set in the second database and extracts a common attribute that is set in common in both the first database and the second database. Then, the merging apparatus merges the first database with the second database by determining whether attribute values classified under the extracted common attribute match.

Merging apparatus and merging method

A storage medium stores a program thereon. The program instructs a computer to perform a process. The process comprises storing first information indicating dependency relationship between types into a storage, the types corresponding to configuration elements included in a system; acquiring relational information and type information from plural databases, the relational information indicating dependency relationships between plural configuration elements, the type information indicating the types of the plural configuration elements; generating second information indicating dependency relationships between a certain configuration element included in the plural configuration elements and each of configuration elements indicating dependency relation with the certain configuration element; generating third information indicating that the certain configuration element and the each of the configuration elements has the dependency relation indicated in the generated second information based on the type information and determining whether the generated third information is coincident with the first information stored in the storage.

Storage medium, determination method, and apparatus

A semiconductor device is provided with a semiconductor substrate comprising element isolation regions and an element region surrounded by the element isolation regions, a first polysilicon layer formed in the element region of the semiconductor substrate, an element-isolating insulation film formed in the element isolation region of the semiconductor substrate, a second polysilicon layer formed on the element-isolating insulation film, a first silicide layer formed on the first polysilicon layer. And the device further comprising a second silicide layer formed on the second polysilicon layer and being thicker than the first silicide layer.

Manufacturing method of a semiconductor device having polycide wiring layer

An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.

Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same

A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM cells, second deep trenches isolating the SRAM cells into each unit bit cell, and at least one or more contacts taking substance voltage potentials in regions isolated by the first and second deep trenches. Then, the device becomes possible to improve a soft error resistance without increasing the device in size.

Semiconductor device

According to an aspect of the present invention, there is provided a pattern design method of a semiconductor device, including preparing design pattern data, separating a pattern region of a semiconductor device on the basis of the design pattern data into a dummy pattern region and a dummy pattern prohibition region, dividing the dummy pattern region into dummy pattern unit regions, setting a plurality of inspection areas in the dummy pattern region and the dummy pattern prohibition region, the inspection area closing round at least the two or more dummy pattern unit regions, a part of the one dummy pattern unit region overlapping a part of another dummy pattern unit region, calculating a tentative pattern-covering fraction of a dummy pattern, the dummy pattern being formed of the dummy pattern unit region in the inspection area, calculating a final pattern-covering fraction of the dummy pattern unit region, the final pattern-covering fraction being obtained by averaging the tentative pattern-covering fraction of the dummy pattern unit region in the inspection area, and generating the dummy pattern in the dummy pattern unit region on the basis of the final pattern-covering fraction calculated on the dummy pattern unit region.

Pattern design method and program of a semiconductor device including dummy patterns

A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.

Semiconductor device comprising buried channel region and method for manufacturing the same

A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of: forming an etching resistive mask over a semiconductor substrate; etching the semiconductor substrate through an opening in the etching resistive mask to form a device isolation trench; forming a coat of a silazane perhydride polymer solution over the semiconductor substrate having the device isolation trench formed therein; vaporizing a solvent from the coat and then subjecting the coat to chemical reaction to form a film of silicon oxide; removing said film of the silicon oxide leaving a residue inside said device isolation trench; and heating said silicon oxide left in said device isolation trench for densification.

Method of producing semiconductor devices

A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a suicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.

Method of manufacturing a semiconductor device having a silicide film

Growing community of inventors

Yokohama, Japan

Satoshi Matsuda