The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Sep. 12, 2006
Applicant:
Satoshi Matsuda, Oita-ken, JP;
Inventor:
Satoshi Matsuda, Oita-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises static random access memory (SRAM) cells formed in a semiconductor substrate, first deep trenches isolating each boundary of an n-well and a p-well of the SRAM cells, second deep trenches isolating the SRAM cells into each unit bit cell, and at least one or more contacts taking substance voltage potentials in regions isolated by the first and second deep trenches. Then, the device becomes possible to improve a soft error resistance without increasing the device in size.