The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 02, 2004
Applicants:
Satoshi Matsuda, Yokohama, JP;
Kazuya Ohuchi, Yokohama, JP;
Inventors:
Satoshi Matsuda, Yokohama, JP;
Kazuya Ohuchi, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes implanting germanium ions into a selected portion of a semiconductor region containing at least silicon, forming P-type and N-type diffusion layers in the semiconductor region, and forming a suicide film which extends from the N type diffusion layer over to the boundary region and the P-type diffusion layer. A boundary region between the P-type and N-type diffusion layers is formed in the selected portion.