The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Oct. 15, 1991
Kazuya Nishihori, Tokyo, JP;
Tomotoshi Inoue, Kawasaki, JP;
Kenichi Tomita, Yokohama, JP;
Hitoshi Mikami, Kawasaki, JP;
Masami Nagaoka, Yokohama, JP;
Naotaka Uchitomi, Machida, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.