The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Aug. 14, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Kazuya Nishihori, Shibuya Tokyo, JP;
Takahiro Nakagawa, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment switches high-frequency signals and includes a semiconductor layer of a first conductivity type. A first layer of a second conductivity type is provided in the semiconductor layer. A second layer of the second conductivity type is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer, the first layer and the second layer. A gate electrode is provided on the gate dielectric film. The gate dielectric film includes a first portion and the semiconductor layer, and a second portion located at both side of the first portion-in a gate length direction of the gate electrode and being thicker than the first portion. At least a part of the second portion is located between the gate electrode and the first layer and between the gate electrode and the second layer.