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For the Inventor, By the Inventor

Tokyo, Japan

Kazunari Kurita

This inventor holds 31 USPTO granted patents and 14 published patent applications and 7 EPO patents, primarily in Epitaxial Wafer Technology. Top assignees: Sumco Corporation, Sumitomo Mitsubishi Silicon Corporation. Active years: 2006-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazunari Kurita. Retrieved from https://idiyas.com/inventor/kazunari-kurita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31 

% Patents Active = 83.9

 

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 132(Granted Patents)


Location History:

  • Minato-ku, JP (2011 - 2017)
  • Tokyo, JP (2006 - 2023)

Company Filing History:

goldMedal29 out of 626 
 
Sumco Corporation
 patents
silverMedal2 out of 90 
 
Sumitomo Mitsubishi Silicon Corporation
 patents

Years Active: 2006-2023

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Areas of Expertise:
Epitaxial Wafer
Silicon Wafer
Solid-State Imaging Device
Semiconductor Substrate
Gettering
High Frequency Diode
Manufacturing Method
Point Defect Distribution
Thin Silicon Wafer
Backside Illumination
31 patents (USPTO):Explore Patents
1. RE49657 - Epitaxial wafer manufacturing method and epitaxial wafer (2023-09-11),
2. 11245014 - Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state imaging device (2022-02-08),
3. 10861709 - Method of evaluating impurity gettering capability of epitaxial silicon wafer and epitaxial silicon wafer (2020-12-08),
4. 10453682 - Epitaxial wafer manufacturing method and epitaxial wafer (2019-10-22),
5. 10396120 - Method for producing semiconductor epitaxial wafer and method of producing solid-state imaging device (2019-08-27),
6. 10224203 - Method of producing semiconductor epitaxial wafer and method of producing solid-state image sensor (2019-03-05),
7. 10062569 - Epitaxial wafer manufacturing method and epitaxial wafer (2018-08-28),
8. 9847370 - Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device (2017-12-19),
9. 9496139 - Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device (2016-11-15),
10. 9281197 - Epitaxial substrate for solid-state imaging device with gettering sink, semiconductor device, back illuminated solid-state imaging device and manufacturing method thereof (2016-03-08),
11. 8864907 - Silicon substrate and manufacturing method of the same (2014-10-21),
12. 8658516 - Method of producing silicon wafer, epitaxial wafer and solid state image sensor, and device for producing silicon wafer (2014-02-25),
13. 8492193 - Semiconductor substrate for solid-state imaging sensing device as well as solid-state image sensing device and method for producing the same (2013-07-23),
14. 8357592 - Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device (2013-01-22),
15. 8309436 - Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate (2012-11-13),

Title: Kazunari Kurita: Innovator in Epitaxial Wafer Technology

Introduction

Kazunari Kurita is a prominent inventor based in Tokyo, Japan, whose contributions to the field of semiconductor technology are reflected in his impressive portfolio of 31 patents. His groundbreaking work focuses on epitaxial wafer manufacturing methods, which are crucial for the development of high-performance electronic devices.

Latest Patents

Kazunari's latest patents include innovative methods for producing epitaxial wafers that exhibit excellent gettering capability while suppressing the formation of epitaxial defects. One patent details an epitaxial wafer that incorporates a modifying layer formed on the surface of a silicon wafer. This layer is composed of a predetermined element, including at least carbon, providing it with specified resistivity characteristics. Furthermore, he has developed a method of producing an epitaxial silicon wafer specifically designed to reduce white spot defects in back-illuminated solid-state imaging devices. This method involves irradiating a silicon wafer's surface with cluster ions to create a modifying layer, ensuring high gettering capability.

Career Highlights

Throughout his career, Kazunari Kurita has made significant contributions while working for leading companies in the semiconductor industry, including Sumco Corporation and Sumitomo Mitsubishi Silicon Corporation. His extensive experience at these organizations has enabled him to refine his expertise in wafer technology and innovate new manufacturing techniques, leading to both economic and technological advancements in the field.

Collaborations

Kazunari has collaborated with notable individuals in the industry, including Takeshi Kadono and Shuichi Omote. These partnerships have fostered an environment of shared knowledge and innovation, further enhancing the development of cutting-edge technologies in epitaxial wafer manufacturing.

Conclusion

Kazunari Kurita's impressive portfolio of patents and his contributions to the semiconductor industry underscore his role as a leading inventor in epitaxial wafer technology. His innovative methods and collaborations demonstrate a commitment to advancing semiconductor manufacturing processes, paving the way for future developments in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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