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Sumitomo Mitsubishi Silicon Corporation

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USPTO Granted Patents = 90

% Expired Patents = 8.9

Trademarks = 1

Forward Citations = 2,230

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146 inventors (with patents filed for the assignee):

Masataka Hourai (8 out of 30 patents)

Toshiaki Ono (7 out of 78 patents)

Hiroshi Asano (6 out of 17 patents)

4. Naoshi Adachi (6 out of 11 patents)

5. Shinsuke Sadamitsu (6 out of 11 patents)

6. Takayuki Kubo (6 out of 14 patents)

7. Hideshi Nishikawa (6 out of 8 patents)

8. Nobumitsu Takase (5 out of 10 patents)

9. Eiichi Asayama (5 out of 7 patents)

10. Shigeru Umeno (4 out of 17 patents)

11. Yasuo Koike (4 out of 16 patents)

12. Tadami Tanaka (4 out of 8 patents)

13. Masataka Horai (4 out of 7 patents)

14. Fumio Kawahigashi (4 out of 4 patents)

15. Yoshinobu Nakada (3 out of 27 patents)

Core Competencies:

Epitaxial Growth

Silicon Wafer

Semiconductor Device

High Resistivity Silicon

Single Crystal

SOI Structure

Double Side Polishing

Defect Inspection

Crystal Growth

Manufacturing Method

Heat Treatment

Particle Monitor

90 patents: Sort by Forward Citations

1. 8926754 - Epitaxial growth susceptor (2015-01-06),

2. 8758505 - Silicon wafer and method for manufacturing the same (2014-06-24),

3. 8283252 - Method of manufacturing semiconductor wafer (2012-10-09),

4. 8252404 - High resistivity silicon wafers (2012-08-28),

5. 8002610 - Double side polishing method and apparatus (2011-08-23),

6. 7947572 - Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulator (2011-05-24),

7. 7837791 - Silicon single crystal wafer for particle monitor (2010-11-23),

8. 7824493 - Silicon wafer and method for manufacturing the same (2010-11-02),

9. 7741193 - SOI structure having a SiGe layer interposed between the silicon and the insulator (2010-06-22),

10. 7740702 - Silicon wafer and method for manufacturing the same (2010-06-22),

11. 7686973 - Silicon wafer etching method and apparatus, and impurity analysis method (2010-03-30),

12. 7678200 - Technique on ozone water for use in cleaning semiconductor substrate (2010-03-16),

13. 7670965 - Production method for silicon wafers and silicon wafer (2010-03-02),

14. 7648409 - Double side polishing method and apparatus (2010-01-19),

15. 7601603 - Method for manufacturing semiconductor device (2009-10-13),

Company Overview

Sumitomo Mitsubishi Silicon Corporation, based in Tokyo, specializes in the manufacturing of high-quality silicon wafers essential for semiconductor devices. The company focuses on advanced technologies such as epitaxial growth and high resistivity silicon, catering to the evolving demands of the semiconductor industry. Their expertise extends to single crystal and SOI structures, as well as double side polishing and defect inspection, ensuring precision and reliability in their products. This positions them as a key player in the semiconductor supply chain.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

90 Patents

#584 in Tokyo

#1,199 in Japan

#8,529 in the World

Sumitomo Mitsubishi Silicon Corporation

Forward Citations = 2,230

146 inventors:

Masataka Hourai (8 out of 30 patents)

Toshiaki Ono (7 out of 78 patents)

Hiroshi Asano (6 out of 17 patents)

4. Naoshi Adachi (6 out of 11 patents)

5. Shinsuke Sadamitsu (6 out of 11 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Sumitomo Mitsubishi Silicon Corporation. Retrieved from https://idiyas.com/company/sumitomo-mitsubishi-silicon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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