The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Mar. 31, 2005
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Tomoatsu Makino, Okazaki, JP;
Syouji Nogami, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
Shoichi Yamauchi, Nagoya, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Tomoatsu Makino, Okazaki, JP;
Syouji Nogami, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
DENSO CORPORATION, Kariya, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.