The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Aug. 11, 2003
Makoto Takemura, Tokyo, JP;
Yasuo Fukuda, Tokyo, JP;
Kazuaki Souda, Tokyo, JP;
Masaaki Kato, Fujisawa, JP;
Eiji Suhara, Ome, JP;
Makoto Takemura, Tokyo, JP;
Yasuo Fukuda, Tokyo, JP;
Kazuaki Souda, Tokyo, JP;
Masaaki Kato, Fujisawa, JP;
Eiji Suhara, Ome, JP;
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Chlorine Engineers Corp. Ltd., Tokyo, JP;
Echo Giken Co. Ltd., Tokyo, JP;
Abstract
An ultra-pure ozone water comprising an increased amount of an organic carbon capable of suppressing the reduction of the half-life period of ozone; and a method for producing the ultra-pure ozone water which comprises adding an organic solvent containing the above organic carbon to an ultra-pure ozone water containing a trace amount of the organic carbon. The above ultra-pure ozone water exhibits an increased half-life period of ozone, and thus, when used in cleaning a semiconductor substrate, allows the cleaning with an ozone water having an enhanced content of ozone, which results in exhibiting an enhanced cleaning capability and cleaning efficiency for an organic impurities, metallic impurities and the like adhered to the substrate, due to enhanced oxidizing action of ozone.