The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Feb. 09, 2005
Applicants:
Yoshinobu Nakada, Tokyo, JP;
Hiroyuki Shiraki, Tokyo, JP;
Inventors:
Yoshinobu Nakada, Tokyo, JP;
Hiroyuki Shiraki, Tokyo, JP;
Assignee:
Sumitomo Mitsubishi Silicon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); H01L 21/324 (2006.01); H01L 21/477 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of Nso that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.