The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2017
Filed:
Sep. 23, 2016
Applicant:
Sumco Corporation, Minato-ku, Tokyo, JP;
Inventors:
Takeshi Kadono, Minato-ku, JP;
Kazunari Kurita, Minato-ku, JP;
Assignee:
SUMCO Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14698 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02532 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/26566 (2013.01); H01L 21/3221 (2013.01); H01L 27/1464 (2013.01); H01L 27/14687 (2013.01); H01L 29/36 (2013.01);
Abstract
The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial waferaccording to the present invention includes a first step of irradiating a semiconductor waferwith cluster ionsto form a modifying layerformed from a constituent element of the cluster ionsin a surface portionA of the semiconductor wafer; and a second step of forming an epitaxial layeron the modifying layerof the semiconductor wafer