The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Jan. 12, 2018
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3225 (2013.01); H01L 21/26506 (2013.01); H01L 21/26566 (2013.01);
Abstract
Provided is a method of evaluating the impurity gettering capability of an epitaxial silicon wafer, which allows for very precise evaluation of the impurity gettering behavior of a modified layer formed immediately under an epitaxial layer, the modified layer containing carbon in solid solution. In this method, a modified layer located immediately under an epitaxial layer, the modified layer containing carbon in solid solution, is analyzed by three-dimensional atom probe microscopy, and the impurity gettering capability of the modified layer is evaluated based on a three-dimensional map of carbon in the modified layer, obtained by the analysis.