The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Mar. 04, 2009
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Kazunari Kurita, Tokyo, JP;
Shuichi Omote, Tokyo, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A condition of a single crystal manufacturing step subjected to the Czochralski method applying an initial oxygen concentration, a dopant concentration or resistivity, and a heat treatment condition is determined simply and clearly on the basis of the conditions of a wafer manufacturing step and a device step so as to obtain a silicon wafer having a desired gettering capability. A manufacturing method of a silicon substrate which is manufactured from a silicon single crystal grown by the CZ method and provided for manufacturing a solid-state imaging device is provided. The internal state of the silicon substrate, which depends on the initial oxygen concentration, the carbon concentration, the resistivity, and the pulling condition of the silicon substrate, is determined by comparing a white spot condition representing upper and lower limits of the density of white spots as device characteristics with the measured density of white spots.