Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Kazunari Kurita

Takeshi Kadono

Shuichi Omote

Takuro Iwanaga

Jun Furukawa

Ryosuke Okuyama

Satoshi Shigematsu

Masataka Hourai

Shinsuke Sadamitsu

Kazuhiro Harada

Hiroyuki Takao

Ryo Hirose

Suichi Omote

Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

Epitaxial wafer manufacturing method and epitaxial wafer

Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of CH(n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

Method of producing epitaxial silicon wafer, epitaxial silicon wafer, and method of producing solid-state imaging device

Provided is a method of evaluating the impurity gettering capability of an epitaxial silicon wafer, which allows for very precise evaluation of the impurity gettering behavior of a modified layer formed immediately under an epitaxial layer, the modified layer containing carbon in solid solution. In this method, a modified layer located immediately under an epitaxial layer, the modified layer containing carbon in solid solution, is analyzed by three-dimensional atom probe microscopy, and the impurity gettering capability of the modified layer is evaluated based on a three-dimensional map of carbon in the modified layer, obtained by the analysis.

Method of evaluating impurity gettering capability of epitaxial silicon wafer and epitaxial silicon wafer

A semiconductor epitaxial wafer production method that can increase the peak concentration of hydrogen in a surface portion of a semiconductor wafer after epitaxial layer formation is provided. A method of producing a semiconductor epitaxial wafer comprises: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing hydrogen as a constituent element, to form a modifying layer formed from, as a solid solution, a constituent element of the cluster ions including hydrogen in a surface portion of the semiconductor wafer; a second step of, after the first step, irradiating the semiconductor wafer with electromagnetic waves of a frequency of 300 MHz or more and 3 THz or less, to heat the semiconductor wafer; and a third step of, after the second step, forming an epitaxial layer on the modifying layer of the semiconductor wafer.

Method for producing semiconductor epitaxial wafer and method of producing solid-state imaging device

Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed in a state in which a temperature of the semiconductor wafer is maintained at lower than 25&#xb0; C.

Method of producing semiconductor epitaxial wafer and method of producing solid-state image sensor

Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method includes: a cluster ion irradiation step of irradiating a surface of a silicon wafer having a resistivity of from 0.001 &#x3a9;&#xb7;cm to 0.1 &#x3a9;&#xb7;cm with cluster ions containing at least carbon at a dose of from 2.0&#xd7;10/cmto 1.0&#xd7;10/cmto form, on a surface portion of the silicon wafer, a modifying layer composed of a constituent element of the cluster ions in the form of a solid solution; and an epitaxial layer forming step of forming, on the modifying layer on the silicon wafer, an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer.

The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial waferaccording to the present invention includes a first step of irradiating a semiconductor waferwith cluster ionsto form a modifying layerformed from a constituent element of the cluster ionsin a surface portionA of the semiconductor wafer; and a second step of forming an epitaxial layeron the modifying layerof the semiconductor wafer

Method of producing semiconductor epitaxial wafer, semiconductor epitaxial wafer, and method of producing solid-state image sensing device

A semiconductor wafer is set in a laser irradiation apparatus, and laser beam irradiation is performed while the semiconductor wafer is moved. At this time, a laser beam emitted from a laser generating apparatus is condensed by a condensing lens so that the condensing point (focal point) is positioned at a depth of several tens of&#x3bc;m or so from one surface of the semiconductor wafer. Thereby, the crystal structure of the semiconductor wafer in the position having such a depth is modified, and a gettering sink is formed.

Epitaxial substrate for solid-state imaging device with gettering sink, semiconductor device, back illuminated solid-state imaging device and manufacturing method thereof

A condition of a single crystal manufacturing step subjected to the Czochralski method applying an initial oxygen concentration, a dopant concentration or resistivity, and a heat treatment condition is determined simply and clearly on the basis of the conditions of a wafer manufacturing step and a device step so as to obtain a silicon wafer having a desired gettering capability. A manufacturing method of a silicon substrate which is manufactured from a silicon single crystal grown by the CZ method and provided for manufacturing a solid-state imaging device is provided. The internal state of the silicon substrate, which depends on the initial oxygen concentration, the carbon concentration, the resistivity, and the pulling condition of the silicon substrate, is determined by comparing a white spot condition representing upper and lower limits of the density of white spots as device characteristics with the measured density of white spots.

Silicon substrate and manufacturing method of the same

An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized.

Method of producing silicon wafer, epitaxial wafer and solid state image sensor, and device for producing silicon wafer

There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1&#xd7;1016-1&#xd7;1017 atoms/cmand solid-soluted oxygen having a concentration of 1.4&#xd7;1018-1.6&#xd7;1018 atoms/cm.

Semiconductor substrate for solid-state imaging sensing device as well as solid-state image sensing device and method for producing the same

A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.

Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device, and method and apparatus for manufacturing semiconductor device

A method of producing an epitaxial substrate for a solid-state imaging device, comprising: forming a gettering sink by injecting laser beam to a semiconductor substrate through one surface thereof, condensing the laser beam to an arbitrarily selected portion of the semiconductor substrate, thereby causing multi-photon absorption process to occur in the portion, and forming a gettering sink having a modified crystal structure; and epitaxially growing at least two epitaxial layers on the semiconductor substrate in which the gettering sink is formed.

Method of producing epitaxial substrate with gettering for solid-state imaging device, and method of producing solid-state imaging device using same substrate

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Tokyo, Japan

Kazunari Kurita