The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2023
Filed:
Sep. 29, 2020
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2005.12); H01L 21/265 (2005.12); H01L 21/02 (2005.12); H01L 29/36 (2005.12);
U.S. Cl.
CPC ...
H01L 21/3221 (2012.12); H01L 21/0262 (2012.12); H01L 21/02381 (2012.12); H01L 21/02447 (2012.12); H01L 21/02532 (2012.12); H01L 21/02658 (2012.12); H01L 21/26506 (2012.12); H01L 21/26566 (2012.12); H01L 29/36 (2012.12);
Abstract
Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.