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For the Inventor, By the Inventor

Tokyo, Japan

Junji Sakurai

USPTO Granted Patents = 16

Average Co-Inventor Count = 1.2

ph-index = 10

Forward Citations = 355(Granted Patents)


Company Filing History:

goldMedal16 out of 39,244 
 
Fujitsu Corporation
 patents

Years Active: 1981-1991

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16 patents (USPTO):Explore Patents
1. 5011783 - Forming selective single crystal regions in insulated pockets formed on (1991-04-30),
2. 4784723 - Method for producing a single-crystalline layer (1988-11-15),
3. 4659422 - Process for producing monocrystalline layer on insulator (1987-04-21),
4. 4642883 - Semiconductor bipolar integrated circuit device and method for (1987-02-17),
5. 4613305 - Horizontal furnace with a suspension cantilever loading system (1986-09-23),
6. 4489478 - Process for producing a three-dimensional semiconductor device (1984-12-25),
7. 4455566 - Highly integrated semiconductor memory device (1984-06-19),
8. 4418399 - Semiconductor memory system (1983-11-29),
9. 4410801 - Ion implantation equipment (1983-10-18),
10. 4407060 - Method of manufacturing a semiconductor device (1983-10-04),
11. 4404735 - Method for manufacturing a field isolation structure for a semiconductor (1983-09-20),
12. 4403400 - Process for producing a semiconductor device (1983-09-13),
13. 4381201 - Method for production of semiconductor devices (1983-04-26),
14. 4353085 - Integrated semiconductor device having insulated gate field effect (1982-10-05),
15. 4329704 - MOS Random access memory with buried storage capacitor (1982-05-11),

Title: The Innovative Mind of Junji Sakurai

Introduction

Junji Sakurai, an accomplished inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor technology. With a robust portfolio of 16 patents, his innovative methods have advanced the production and efficiency of semiconductor devices.

Latest Patents

Among his latest patents, Sakurai has developed groundbreaking techniques for forming selective single crystal regions in insulated pockets. This method involves creating an insulating layer on a substrate with multiple concave portions, followed by depositing a non-single crystalline silicon layer. The innovative process allows each concave portion to be melted independently, enabling the formation of single crystalline regions through energy ray irradiation. Additionally, he has designed a method for producing a single-crystalline layer, which demonstrates his expertise in refining semiconductor production processes.

Career Highlights

Sakurai is currently working at Fujitsu Corporation, a leading technology company in Japan. His career is marked by a commitment to research and development in semiconductor technologies, showcasing his ability to push the boundaries of current technology.

Collaborations

Throughout his career, Junji Sakurai has collaborated with renowned professionals in his field, including Hajime Kamioka and Kiyoshi Miyasaka. These partnerships reflect a shared dedication to innovation and have contributed to the successful development of numerous patented technologies.

Conclusion

Junji Sakurai's work exemplifies the spirit of innovation in the semiconductor industry. His patented methods not only enhance the production of semiconductor devices but also pave the way for future advancements in technology. As an inventor, his contributions continue to influence and inspire the future of electronics.

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