The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1983
Filed:
Feb. 10, 1982
Applicant:
Inventor:
Junji Sakurai, Tokyo, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2957 / ; 2957 / ; 29578 ; 148-15 ; 148191 ;
Abstract
In a process for producing a semiconductor device, buried regions are formed within the semiconductor substrate by introducing an impurity, an epitaxial layer is formed on the buried regions, and an energy beam is selectively irradiated on the surface of the epitaxial layer.
Sakurai, Junji. (1983). Process for producing a semiconductor device (U.S. Patent No. 4403400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4403400
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile