The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1983
Filed:
May. 13, 1981
Junji Sakurai, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for forming a field isolation structure for a semiconductor device, in which a groove is formed in a semiconductor substrate, an insulating layer is formed on the substrate at least in the groove, a glass layer or a silicon layer is formed thereon, and thereafter a high energy beam such as a laser beam is irradiated onto the glass or silicon layer to selectively heat the same thereby to melt or fluidify the layer and let the same flow into the groove is disclosed. A smooth and flat surface is obtained through the above melting process, which also prevents electrical breaks in wiring layers formed thereon. The method is particularly suited to producing small field isolation structures thus improving the integration density of the device.