The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1982
Filed:
Sep. 19, 1979
Applicant:
Inventors:
Junji Sakurai, Tokyo, JP;
Kiyoshi Miyasaka, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 41 ; 357 24 ; 357 59 ;
Abstract
A one transistor, one capacitance type dynamic MOS.RAM is provided with a buried storage capacitor and a planar transfer electrode. The MOS.RAM is, therefore, characterized by a small size of the memory cells and a simple production process. One process feature of the present invention is that a quick diffusion through polycrystalline silicon is employed for forming a vertical connection between the buried storage capacitor and the source or drain of the MOS transistor.