The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1988
Filed:
Mar. 03, 1986
Applicant:
Inventor:
Junji Sakurai, Tokyo, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
15662073 ; 156D / ; 437 83 ;
Abstract
A method of producing a semiconductor device includes the steps of preparing a base body, forming a non-single-crystalline semiconductor layer on the base body, and irradiating the non-single-crystalline semiconductor layer with an energy beam having a strip shaped irradiation region, in such a manner that either the base body or the energy beam is moved in a direction other than a scanning direction of the energy beam.