The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 1987
Filed:
Mar. 22, 1984
Applicant:
Inventor:
Junji Sakurai, Tokyo, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ; 156D / ; 156D / ; 156D / ; 156D / ; 427 531 ;
Abstract
A process for producing a monocrystalline layer on an insulator, particularly in a semiconductor wafer adapted for use to produce large-scale integrated circuits, comprising the steps of providing a nonmonocrystalline layer on an insulator and heating a region of the nonmonocrystalline layer by irradiating it from two heat sources while moving the heat sources relative to the nomonocrystalline layer, thereby locally melting and transforming the nonmonocrystalline layer to a monocrystalline layer.