The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1982
Filed:
Feb. 26, 1979
Junji Sakurai, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An integrated semiconductor device having a plurality of IG FETs respectively formed an epitaxial semiconductor layer in plural apertures of a buried insulating film, and having regions for wiring extending under the buried insulating film within the semiconductor substrate. The wiring area has conductivity type opposite to the semiconductor substrate and functions to electrically connect between plural IG FETs. Thereby more complicated wirings can be realized. This region lying under the buried insulating film in the substrate can also function as the common well in the complementary type integrated semiconductor device and can eliminate the problem of defective operation which is likely to be caused in a complementary device having the buried insulating film.