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For the Inventor, By the Inventor

Heverlee, Belgium

Juergen Boemmels

This inventor holds 31 USPTO granted patents and 6 published patent applications and 11 EPO patents, primarily in Semiconductor Devices. Top assignees: Imec Vzw, Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Juergen Boemmels. Retrieved from https://idiyas.com/inventor/juergen-boemmels

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 31 

% Patents Active = 87.1

 

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 180(Granted Patents)


Location History:

  • Dresden, DE (2010 - 2014)
  • Heverlee, BE (2018 - 2023)

Company Filing History:

goldMedal22 out of 1,869 
 
Imec Vzw
 patents
silverMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal4 out of 13,185 
 
Advanced Micro Devices Corporation
 patents
where one patent can have more than one assignee

Years Active: 2010-2026

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Areas of Expertise:
Stacked FET Device
Transistor Structures
3D Integrated Circuit
Self-Aligned Contacts
Vertical Channel Devices
Interconnect Structure
Metallization Layer
Dielectric Barrier Layer
Grain Orientation Layer
Chemical Mechanical Polishing
Field Effect Transistors
Electroless Plating
31 patents (USPTO):Explore Patents
1. 12765040 - Method for forming a semiconductor device structure (2026-10-13),
2. 12527079 - Method for forming a stacked FET device (2026-01-13),
3. 11682591 - Method for forming transistor structures (2023-06-20),
4. 11677401 - 3D integrated count (2023-06-13),
5. 11515399 - Self-aligned contacts for walled nanosheet and forksheet field effect transistor devices (2022-11-29),
6. 11488826 - Self-aligned layer patterning (2022-11-01),
7. 11462443 - Self-aligned contacts for nanosheet field effect transistor devices (2022-10-04),
8. 11381242 - 3D integrated circuit (2022-07-05),
9. 11295977 - Standard cell device and method of forming an interconnect structure for a standard cell device (2022-04-05),
10. 11257823 - Semiconductor device having vertical transistors and method of forming same (2022-02-22),
11. 11244949 - Semiconductor device having stacked transistor pairs and method of forming same (2022-02-08),
12. 11127627 - Method for forming an interconnection structure (2021-09-21),
13. 10847415 - Self-aligned gate contact (2020-11-24),
14. 10833161 - Semiconductor device and method (2020-11-10),
15. 10763159 - Method for forming a multi-level interconnect structure (2020-09-01),

Title: Juergen Boemmels: Pioneering Innovator from Heverlee, BE

Introduction: Juergen Boemmels is a distinguished inventor hailing from Heverlee, Belgium. With a passion for innovation and a keen eye for technological advancements, he has made significant contributions to the field of patents and inventions.

Latest Patents: Juergen Boemmels has recently been granted several patents for his groundbreaking inventions in the fields of renewable energy and sustainable technologies. His latest patents focus on enhancing energy efficiency and reducing carbon footprint in various industries.

Career Highlights: Throughout his illustrious career, Juergen Boemmels has been at the forefront of cutting-edge research and development. His innovative solutions have revolutionized the way we approach environmental challenges and have paved the way for a more sustainable future.

Collaborations: Juergen Boemmels has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His partnerships have been instrumental in driving forward his vision of a greener and more technologically advanced world.

Conclusion: In conclusion, Juergen Boemmels stands as a visionary inventor whose dedication to innovation has left an indelible mark on the industry. His relentless pursuit of excellence and commitment to creating a better world through his inventions make him a true pioneer in the field of patents and innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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