The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Aug. 24, 2021
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Boon Teik Chan, Wilsele, BE;

Juergen Boemmels, Heverlee, BE;

Basoene Briggs, Heverlee, BE;

Assignee:

IMEC Vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/775 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/76283 (2013.01); H01L 27/1203 (2013.01); H01L 29/775 (2013.01); H01L 21/823878 (2013.01);
Abstract

According to an aspect of the present inventive concept there is provided a method for forming a first and a second transistor structure, wherein the first and second transistor structures are spaced apart by an insulating wall, and the method comprising:


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