Heverlee, Belgium

Basoene Briggs

USPTO Granted Patents = 7 

 

Average Co-Inventor Count = 3.7

ph-index = 1


Company Filing History:


Years Active: 2019-2025

Loading Chart...
Loading Chart...
7 patents (USPTO):

Title: The Innovative Contributions of Basoene Briggs

Introduction

Basoene Briggs is a notable inventor based in Heverlee, Belgium. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on advancing semiconductor structures and methods, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is titled "Strained Semiconductor Monocrystalline Nanostructure." This invention describes a semiconductor structure that includes a substrate with a top layer and one or more monocrystalline nanostructures. Each nanostructure features a first and second extremity, which define an axis parallel to the top surface of the substrate. The source and drain structures are made of a p-doped or n-doped semiconductor material, creating compressive or tensile strain in the nanostructure. Another significant patent is the "Method for Forming a Buried Metal Line in a Semiconductor Substrate." This method involves creating a metal line trench in the substrate and depositing metal line material selectively, followed by embedding semiconductor structures in an insulating layer.

Career Highlights

Basoene Briggs has worked with prominent organizations such as Imec and Katholieke Universiteit Leuven. His experience in these institutions has allowed him to collaborate on cutting-edge research and development projects in semiconductor technology.

Collaborations

Some of his notable coworkers include Juergen Boemmels and Boon Teik Chan. Their collaborative efforts have contributed to the advancement of semiconductor innovations.

Conclusion

Basoene Briggs is a distinguished inventor whose work in semiconductor technology has led to several important patents. His contributions continue to influence the field and pave the way for future innovations.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…