The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Sep. 18, 2023
Applicant:
Imec Vzw, Leuven, BE;
Inventors:
Boon Teik Chan, Wilsele, BE;
Zheng Tao, Heverlee, BE;
Efrain Altamirano Sanchez, Kessel-Lo, BE;
Anshul Gupta, Leuven, BE;
Basoene Briggs, Heverlee, BE;
Assignee:
Imec vzw, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/743 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01);
Abstract
A method for forming a buried metal line in a semiconductor substrate comprises forming, at a position between a pair of semiconductor structures, a metal line trench in the semiconductor substrate at a level below a base of each semiconductor structure of the pair, and forming the metal line in the metal line trench by means of area selective deposition of a metal line material, followed by embedding the pair of semiconductor structures in an insulating layer.