The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Apr. 27, 2021
Imec Vzw, Leuven, BE;
Geert Eneman, Heverlee, BE;
Basoene Briggs, Heverlee, BE;
An De Keersgieter, Oud-Heverlee, BE;
Anabela Veloso, Leuven, BE;
Paola Favia, Overijse, BE;
IMEC VZW, Leuven, BE;
Abstract
A semiconductor structure comprises a semiconductor substrate having a top layer and one or more semiconductor monocrystalline nanostructures. Each nanostructure has a first and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated therefrom by a distance, and a source structure epitaxially grown on the first extremity and a drain structure epitaxially grown on the second extremity. The source and drain structures are made of a p-doped (or alternatively n-doped) semiconductor monocrystalline material having a smaller (or alternatively larger) unstrained lattice constant than the unstrained lattice constant of the semiconductor monocrystalline material making the semiconductor monocrystalline nanostructure on which they are grown, thereby creating compressive (or alternatively tensile) strain in that semiconductor monocrystalline nanostructure.