Self-aligned gate contact

Abstract

The disclosed technology generally relates to semiconductor devices, and more specifically to electrical contacts to a transistor device, and a method of making such electrical contacts. In one aspect, a method of forming one or more self-aligned gate contacts in a semiconductor device includes providing a substrate having formed thereon at least one gate stack, where the gate stack includes a gate dielectric and a gate electrode formed over an active region in or on the substrate, and where the substrate further has formed thereon a spacer material coating lateral sides of the at least one gate stack. The method additionally includes selectively recessing the gate electrode of the at least one gate stack against the spacer material, thereby creating a first set of recess cavities. The method additionally includes filling the first set of recess cavities with a dielectric material gate cap. The method additionally includes etching at least one via above the at least one gate stack and through the dielectric material gate cap, where etching the at least one via comprises selectively etching against the spacer material, thereby exposing the gate electrode. The method further includes forming, in the at least one via, a gate contact electrically connecting the gate electrode.