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Jiang Yan

USPTO Granted Patents = 44 (Patent Applications = 6)

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 798(Granted Patents)

Location History:

Beacon, NY (US) (2005)
Fishkill, NY (US) (2007 - 2012)
Newburg, NY (US) (2014)
New York, NY (US) (2015)
Beijing, CN (2014 - 2018)
Newburgh, NY (US) (2007 - 2019)

Company Filing History:

25 out of 14,724

Infineon Technologies Ag

patents

15 out of 3,100

Chinese Academy of Sciences

patents

6 out of 164,197

International Business Machines Corporation

patents

4. 3 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

patents

5. 2 out of 244

Infineon Technologies North America Corp.

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2005-2019

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Areas of Expertise:

Silicon-On-Insulator

Metal Silicide

Semiconductor Device

Dummy Gate Structure

Shallow Trench Isolation

Strained Semiconductor

Embedded Flash Memory

Conductive Features

Transistor Fabrication

Mixed Orientation Substrate

Gate-Last Process

PVD Method

44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10217812 - Silicon-on-insulator chip having multiple crystal orientations (2019-02-26),

2. 10096691 - Methods for forming metal silicide (2018-10-09),

3. 9831089 - Method for adjusting effective work function of metal gate (2017-11-28),

4. 9607986 - Mixed orientation semiconductor device and method (2017-03-28),

5. 9437593 - Silicided semiconductor structure and method of forming the same (2016-09-06),

6. 9419095 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2016-08-16),

7. 9331172 - Method for making HKMG dummy gate structure with amorphous/ONO masking structure and procedure (2016-05-03),

8. 9306003 - Semiconductor device and method for manufacturing the same (2016-04-05),

9. 9202890 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2015-12-01),

10. 9111863 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2015-08-18),

11. 9070759 - Semiconductor device and method of making same (2015-06-30),

12. 9070744 - Shallow trench isolation structure, manufacturing method thereof and a device based on the structure (2015-06-30),

13. 9024435 - Semiconductor device, formation method thereof, and package structure (2015-05-05),

14. 8921171 - Method for forming gate structure, method for forming semiconductor device, and semiconductor device (2014-12-30),

15. 8865592 - Silicided semiconductor structure and method of forming the same (2014-10-21),

Title: The Innovative Mind of Jiang Yan

Introduction: Jiang Yan, a brilliant inventor hailing from Newburgh, NY, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jiang Yan holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Jiang Yan has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Jiang Yan has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Jiang Yan's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a visionary inventor whose work continues to inspire and shape the future of technology.

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