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For the Inventor, By the Inventor

Newburgh, NY, United States of America

Jiang Yan

This inventor holds 44 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Infineon Technologies Ag, Chinese Academy of Sciences, International Business Machines Corporation. Active years: 2005-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jiang Yan. Retrieved from https://idiyas.com/inventor/jiang-yan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 43.2

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 805(Granted Patents)


Location History:

  • Beacon, NY (US) (2005)
  • Fishkill, NY (US) (2007 - 2012)
  • Newburg, NY (US) (2014)
  • New York, NY (US) (2015)
  • Beijing, CN (2014 - 2018)
  • Newburgh, NY (US) (2007 - 2019)

Company Filing History:

goldMedal25 out of 15,027 
 
Infineon Technologies Ag
 patents
silverMedal15 out of 3,358 
 
Chinese Academy of Sciences
 patents
bronzeMedal6 out of 166,351 
 
International Business Machines Corporation
 patents
4. 3 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
5. 2 out of 244 
 
Infineon Technologies North America Corp.
 patents
6. 1 out of 13 
 
Infineon Ag
 patents
7. 1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2005-2019

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Areas of Expertise:
Silicon-On-Insulator
Metal Silicide
Gate Structure
Dummy Gate
Strained Semiconductor
Embedded Flash Memory
Conductive Features
Transistor Fabrication
Shallow Trench Isolation
CMOS Device
pFET
Active Area Formation
44 patents (USPTO):Explore Patents
1. 10217812 - Silicon-on-insulator chip having multiple crystal orientations (2019-02-26),
2. 10096691 - Methods for forming metal silicide (2018-10-09),
3. 9831089 - Method for adjusting effective work function of metal gate (2017-11-28),
4. 9607986 - Mixed orientation semiconductor device and method (2017-03-28),
5. 9437593 - Silicided semiconductor structure and method of forming the same (2016-09-06),
6. 9419095 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2016-08-16),
7. 9331172 - Method for making HKMG dummy gate structure with amorphous/ONO masking structure and procedure (2016-05-03),
8. 9306003 - Semiconductor device and method for manufacturing the same (2016-04-05),
9. 9202890 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2015-12-01),
10. 9111863 - Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process (2015-08-18),
11. 9070759 - Semiconductor device and method of making same (2015-06-30),
12. 9070744 - Shallow trench isolation structure, manufacturing method thereof and a device based on the structure (2015-06-30),
13. 9024435 - Semiconductor device, formation method thereof, and package structure (2015-05-05),
14. 8921171 - Method for forming gate structure, method for forming semiconductor device, and semiconductor device (2014-12-30),
15. 8865592 - Silicided semiconductor structure and method of forming the same (2014-10-21),

Title: The Innovative Mind of Jiang Yan

Introduction: Jiang Yan, a brilliant inventor hailing from Newburgh, NY, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jiang Yan holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Jiang Yan has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Jiang Yan has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Jiang Yan's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his reputation as a visionary inventor whose work continues to inspire and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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