The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
Jul. 29, 2015
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Qingzhu Zhang, Beijing, CN;
Lichuan Zhao, Beijing, CN;
Xiongkun Yang, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Jiang Yan, Beijing, CN;
Junfeng Li, Beijing, CN;
Tao Yang, Beijing, CN;
Jinbiao Liu, Beijing, CN;
Abstract
A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.