Xiongkun Yang

Title: Xiongkun Yang: Innovator in Metal Silicide Technology

Introduction

Xiongkun Yang is a prominent inventor based in Beijing, China. He has made significant contributions to the field of materials science, particularly in the development of methods for forming metal silicide. His innovative approach addresses critical challenges in semiconductor technology.

Latest Patents

Xiongkun Yang holds a patent titled "Methods for forming metal silicide." This patent describes a method that involves providing a substrate with a fin, a gate formed on the fin, and spacers on opposite sides of the gate. The process includes depositing a titanium (Ti) metal layer, siliconizing the Ti metal layer, and removing any unreacted Ti metal layer. The method is notable for its ability to prevent current leakage in a depletion region, thereby reducing the leakage current of the substrate. This is achieved by ensuring that diffusion primarily occurs with silicon atoms, while the titanium atoms remain stable during thermal annealing.

Career Highlights

Xiongkun Yang is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced materials. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Xiongkun Yang collaborates with esteemed colleagues, including Qingzhu Zhang and Lichuan Zhao. Their combined expertise contributes to the advancement of innovative technologies in their field.

Conclusion

Xiongkun Yang's contributions to metal silicide technology exemplify the importance of innovation in semiconductor research. His patented methods not only enhance device performance but also pave the way for future advancements in the industry.