Beijing, China

Qingzhu Zhang

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2016-2023

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):

Title: The Innovations of Qingzhu Zhang

Introduction

Qingzhu Zhang is a prominent inventor based in Beijing, China, known for his significant contributions to the field of semiconductor technology. With a total of eight patents to his name, Zhang has been at the forefront of developing cutting-edge devices that push the boundaries of innovation in electrical engineering.

Latest Patents

Zhang's latest patents include a "Method for forming gate-all-around nanowire device" and a "Stacked nanowire or nanosheet gate-all-around device." The first patent details a process for forming a gate-all-around nanowire device that includes a first fin with at least one first and one second epitaxial layer alternately stacked. This design allows for variations in doping concentration within the channel region, ultimately enhancing the device's performance.

The second patent describes a stacked nanowire or nanosheet gate-all-around device that features multiple nanowires or nanosheets on a silicon substrate. The invention introduces a notch structure that isolates the stacked elements from the substrate, improving functionality and efficiency. These innovations reflect Zhang's deep understanding of nanoengineering and his commitment to advancing semiconductor technology.

Career Highlights

Zhang is affiliated with the Chinese Academy of Sciences, where he conducts his research and development work. His career is marked by a dedication to advancing the capabilities of nanowire technology, which is essential for the next generation of electronic devices. Through his inventions, he has made a lasting impact on the field, enabling further innovations in various applications.

Collaborations

In his pursuit of technological advancements, Zhang collaborates with notable colleagues such as Huaxiang Yin and Tianchun Ye. These collaborations have fostered a creative environment that encourages innovation and leads to groundbreaking discoveries in the realm of semiconductor devices.

Conclusion

Qingzhu Zhang's contributions to the field of electronics exemplify the spirit of innovation. His latest patents, combined with his collaborative efforts at the Chinese Academy of Sciences, position him as a key figure in the development of advanced nanowire technology. As the demand for more efficient and compact electronic devices continues to rise, Zhang's work remains essential to the future of semiconductor applications.

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