The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Sep. 23, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Institute of Microelectronics, Chinese Academy, Beijing, CN;
Abstract
A method for manufacturing a semiconductor device is provided. A first substrate and at least one second substrate are provided. A single crystal lamination structure is formed on the first substrate. The single crystal lamination structure includes at least one hetero-material layer and at least one channel material layer that are alternately laminated, each of the at least one hetero-material layer is bonded to an adjacent one of the at least one channel material layer at a side away from the first substrate, and each of the at least one channel material layer is formed from one of the at least one second substrate. At least one layer of nanowire or nanosheet is formed from the single crystal lamination structure. A gate dielectric layer and a gate which surround each of the at least one layer of nanowire or nanosheet is formed. A semiconductor device is also provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile