The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Dec. 19, 2019
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Qingzhu Zhang, Beijing, CN;
Zhaohao Zhang, Beijing, CN;
Tianchun Ye, Beijing, CN;
Abstract
A negative capacitance field effect transistor (NCFET) and a manufacturing method thereof. The NCFET includes: a substrate structure, including a MOS region; a gate insulating dielectric structure, covering the MOS region; and a metal gate stack layer, covering the gate insulating dielectric structure. The gate insulating dielectric structure includes an interface oxide layer, a HfOlayer, a doping material layer, and a ferroelectric material layer, which are sequentially stacked along a direction away from the substrate structure. A ferroelectric material in the ferroelectric material layer is HfAO, A represents a doping element, and 0.1≤x≤0.9. A material forming the doping material layer is AOor A, and a ratio of y/z is equal to 1/2, 2/3, 2/5 or 1/1. Ferroelectric characteristics, material stability, and material reliability of the NCFET are improved by increasing domain polarity of the ferroelectric material.