The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Feb. 03, 2009
Applicants:

Jiang Yan, Newburgh, NY (US);

Henning Haffner, Pawling, NY (US);

Frank Huebinger, Dresden, DE;

Sunoo Kim, Hopewell Junction, NY (US);

Richard Lindsay, Beacon, NY (US);

Klaus Schruefer, Baldham, DE;

Inventors:

Jiang Yan, Newburgh, NY (US);

Henning Haffner, Pawling, NY (US);

Frank Huebinger, Dresden, DE;

SunOo Kim, Hopewell Junction, NY (US);

Richard Lindsay, Beacon, NY (US);

Klaus Schruefer, Baldham, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/525 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/28088 (2013.01); H01L 29/4966 (2013.01);
Abstract

A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.


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