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For the Inventor, By the Inventor

Fishkill, NY, United States of America

Richard Lindsay

USPTO Granted Patents = 23

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 75(Granted Patents)


Location History:

  • Fishkill, NY (US) (2009 - 2014)
  • Beacon, NY (US) (2010 - 2018)

Company Filing History:

goldMedal23 out of 14,705 
 
Infineon Technologies Ag
 patents

Years Active: 2009-2018

where 'Filed Patents' based on already Granted Patents

23 patents (USPTO):
1. 10089430 - Integrated circuits and methods of design and manufacture thereof (2018-10-02),
2. 9767244 - Integrated circuits and methods of design and manufacture thereof (2017-09-19),
3. 9437593 - Silicided semiconductor structure and method of forming the same (2016-09-06),
4. 9324707 - Integrated circuits and methods of design and manufacture thereof (2016-04-26),
5. 9059141 - Buried gate transistor (2015-06-16),
6. 8865592 - Silicided semiconductor structure and method of forming the same (2014-10-21),
7. 8809958 - Integrated circuits and methods of design and manufacture thereof (2014-08-19),
8. 8796762 - Buried gate transistor (2014-08-05),
9. 8765548 - Capacitors and methods of manufacture thereof (2014-07-01),
10. 8546916 - Capacitors and methods of manufacture thereof (2013-10-01),
11. 8482042 - Strained semiconductor device and method of making same (2013-07-09),
12. 8450171 - Strained semiconductor device and method of making same (2013-05-28),
13. 8431972 - Semiconductor ESD device and method of making same (2013-04-30),
14. 8338887 - Buried gate transistor (2012-12-25),
15. 8078998 - Integrated circuits and methods of design and manufacture thereof (2011-12-13),

Title: Richard Lindsay: Innovator in Integrated Circuits

Introduction

Richard Lindsay, based in Fishkill, NY, is a distinguished inventor known for his significant contributions to the field of integrated circuits. With an impressive portfolio of 23 patents, he has made notable advancements that enhance the design and manufacture of semiconductor devices.

Latest Patents

Lindsay's latest patents focus on integrated circuits and methods of design and manufacture thereof. One prominent method he developed involves utilizing a first mask to pattern a gate material, which forms a multitude of first and second features. The first features represent gate electrodes of semiconductor devices, while the second features serve as dummy electrodes. By strategically removing selected dummy electrodes using a second mask, this innovative approach offers enhanced flexibility for tailoring individual devices to meet various objectives.

Career Highlights

Richard Lindsay has dedicated his career to advancing technology within the semiconductor industry. His work at Infineon Technologies AG showcases his commitment to innovation and excellence. Over the years, his inventions have paved the way for improvements in device performance and manufacturing processes.

Collaborations

In his pursuit of innovation, Lindsay has collaborated with various professionals, including his coworkers Henning Haffner and Manfred Eller. These partnerships have enabled him to explore new ideas and foster advancements in integrated circuit technology.

Conclusion

Throughout his career, Richard Lindsay has emerged as a leading figure in developing cutting-edge solutions for integrated circuits. His inventions not only demonstrate his technical expertise but also reflect his ability to inspire progress in the semiconductor industry. As his body of work continues to grow, the impact of his contributions will undoubtedly resonate in the field for years to come.

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