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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10089430 B1

PDFFull Text
Date of Patent:
Oct. 02, 2018

Filed:

Aug. 21, 2017

Integrated circuits and methods of design and manufacture thereof

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Henning Haffner, Pawling, NY (US);

Manfred Eller, Beacon, NY (US);

Richard Lindsay, Beacon, NY (US);

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Yasser A Abdelaziez

Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); G03F 1/00 (2012.01); H01L 27/082 (2006.01); H01L 27/085 (2006.01); H01L 21/033 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G03F 1/00 (2013.01); H01L 21/0334 (2013.01); H01L 21/28123 (2013.01); H01L 21/823425 (2013.01); H01L 21/823437 (2013.01); H01L 27/0207 (2013.01); H01L 27/082 (2013.01); H01L 27/085 (2013.01); H01L 27/088 (2013.01); G06F 2217/12 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01); Y10T 29/41 (2015.01);
Abstract

Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. The first features form gate electrodes of the semiconductor devices, whereas the second features are dummy electrodes. Based on the location of these dummy electrodes, selected dummy electrodes are removed using a second mask. The use of the method provides greater flexibility in tailoring individual devices for different objectives.

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