The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Sep. 25, 2006
Jin-ping Han, Fishkill, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Jiang Yan, Newburgh, NY (US);
Jingyu Lian, Walkill, NY (US);
Manfred Eller, Wappingers Falls, NY (US);
Jin-Ping Han, Fishkill, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Jiang Yan, Newburgh, NY (US);
Jingyu Lian, Walkill, NY (US);
Manfred Eller, Wappingers Falls, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of making a semiconductor device is disclosed. A device is fabricated on a semiconductor body. A gate electrode is disposed over the semiconductor body with a gate dielectric between the gate electrode and the semiconductor body, wherein the gate dielectric has a length greater than the gate electrode. A first source/drain region is disposed within the semiconductor body adjacent to the first edge of the gate with the gate dielectric at least partially overlapping the first source/drain region, and a second source/drain region is disposed within the semiconductor body adjacent to the first edge of the gate with the gate dielectric at least partially overlapping the second source/drain region.