The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Aug. 12, 2011
Huicai Zhong, San Jose, CA (US);
Qingqing Liang, Lagrangeville, NY (US);
Jiang Yan, Newburgh, NY (US);
Chao Zhao, Kessel-lo, BE;
Huicai Zhong, San Jose, CA (US);
Qingqing Liang, Lagrangeville, NY (US);
Jiang Yan, Newburgh, NY (US);
Chao Zhao, Kessel-lo, BE;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, P.R., CN;
Abstract
A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in the dielectric layer; and at least one heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path, wherein openings of the heat dissipation path are exposed on the surface of the dielectric layer. The present invention can improve heat dissipation efficiency, and prevent chips from overheating.