logo

For the Inventor, By the Inventor

Seoul, South Korea

Ji-hong Ahn

USPTO Granted Patents = 11

Average Co-Inventor Count = 1.2

ph-index = 10

Forward Citations = 339(Granted Patents)


Company Filing History:

goldMedal11 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1992-1999

Loading Chart...
11 patents (USPTO):Explore Patents
1. 5965939 - Semiconductor device and a method of manufacture (1999-10-12),
2. 5488007 - Method of manufacture of a semiconductor device (1996-01-30),
3. 5386382 - Semiconductor memory device and a manufacturing method thereof (1995-01-31),
4. 5358888 - Method for manufacturing a capacitor of an integrated semiconductor (1994-10-25),
5. 5330614 - Manufacturing method of a capacitor having a storage electrode whose (1994-07-19),
6. 5284787 - Method of making a semiconductor memory device having improved (1994-02-08),
7. 5279983 - Method of making a semiconductor memory device (1994-01-18),
8. 5274258 - High density semiconductor memory device (MBC cell) (1993-12-28),
9. 5164881 - Highly integrated semiconductor memory device and the fabrication method (1992-11-17),
10. 5158905 - Method for manufacturing a semiconductor device with villus-type (1992-10-27),
11. 5134086 - Method for manufacturing capacitor of highly integrated semiconductor (1992-07-28),

Title: **Ji-hong Ahn: Innovator in Semiconductor Technology**

Introduction

Ji-hong Ahn, located in Seoul, South Korea, is a prominent inventor known for his contributions to the field of semiconductor technology. With a total of 11 patents to his name, Ahn has made significant strides in improving the efficiency and effectiveness of semiconductor devices. His work is primarily associated with Samsung Electronics Co., Ltd., where he collaborates with other talented engineers and researchers.

Latest Patents

Among Ji-hong Ahn's latest patents is a groundbreaking semiconductor device and a comprehensive method of manufacture. This semiconductor device features a closed step portion and a global step portion with an insulating layer that has a planarized surface. The innovative design includes the formation of a dummy pattern on the global step portion through a photolithography process. Following this, a BPSG layer is applied to both portions, which is then heat-treated to achieve reflow. This enhanced planarization reduces notching and other discontinuities during metallization, thus improving the yield and electrical characteristics of semiconductor devices.

Career Highlights

Throughout his career, Ji-hong Ahn has developed innovative solutions that have transformed semiconductor manufacturing processes. His patents reflect a deep understanding of the intricate relationships between different elements of device design and manufacturing, showcasing his ability to blend theory with practical applications.

Collaborations

Ahn's journey in the semiconductor field is not been solitary. He has collaborated with esteemed colleagues such as Kyeong-tae Kim and Yun-seung Shin. Together, they have contributed to advancing technologies that benefit the semiconductor industry as a whole.

Conclusion

Ji-hong Ahn's work exemplifies the spirit of innovation in the fast-paced world of semiconductor technology. With his extensive patent portfolio and strategic collaborations, Ahn continues to push the boundaries of what is possible in semiconductor manufacturing, promising a future of improved performance and efficiency in electronic devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…