The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1999
Filed:
Apr. 22, 1997
Kyeong-tae Kim, Seoul, KR;
Yun-seung Shin, Kyungnki-do, KR;
Young-hun Park, Kyungki-do, KR;
Won-mo Park, Kyungki-do, KR;
Ji-hong Ahn, Seoul, KR;
Abstract
A semiconductor device having a closed step portion and a global step portion including an insulating layer having a planarized surface on the global step portion is provided. A dummy pattern is formed by forming an insulating layer on the global step portion and then patterning through a photolithography process. After forming the dummy pattern for compensating steps in the global step portion and between the closed step portion and the global step portion, a BPSG layer is formed on both the closed step portion and the global step portion, and then the BPSG layer is heat-treated to cause it to reflow. The BPSG layer as an insulating interlayer having a planarized surface. The improved planarization decreases the occurrence of notching and discontinuities in the succeeding metallization processes thereby enhancing the yield and electrical characteristics of the semiconductor device.